Title :
Numerical analysis of MOS transistor effective channel width
Author :
Asenov, A.M. ; Stefanov, Evgueniy N. ; Antov, B.Z.
Author_Institution :
Institute of Microelectronics, Sofia, Bulgaria
Abstract :
The effect of modulation of the effective width of a narrow-channel MOST by the gate voltage is demonstrated using a two-dimensional integral MOS process and device similator. The realistic shapes of the `bird´s beak¿ and doping concentrations allow a numerical analysis of this effect to be made for typical enhancement- and depletion-mode devices, as well as a comparison with the experiment.
Keywords :
insulated gate field effect transistors; numerical analysis; semiconductor device models; 2-D simulation; MOS transistor effective channel width; bird´s beak shape; channel width modulation; depletion-mode devices; doping profile shape; enhancement mode devices; gate voltage; models; narrow-channel MOST; numerical analysis; numerical methods;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850420
