Title :
Low-loss GaAs/GaAlAs strip-loaded waveguides with high coupling efficiency to single-mode fibres
Author :
Lin, S.H. ; Wang, S.Y. ; Newton, S.A. ; Houng, Y.M.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, USA
Abstract :
We report measurements of low-loss MOVPE-grown GaAlAs/GaAs strip-loaded waveguides with high coupling efficiency to single-mode fibres. A propagation loss of 2 dB/cm and a coupling efficiency of 70% has been achieved for a p+-i-n+-structure waveguide. A propagation loss of 0.7 dB/cm and a coupling efficiency of 61% has also been achieved for an n¿-i-n¿-structure waveguide.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical couplers; optical waveguides; GaAs/GaAlAs strip-loaded waveguides; III-V semiconductors; MOVPE-grown GaAlAs/GaAs; coupling efficiency; high coupling efficiency to single-mode fibres; low loss waveguides; measurements; n-- i- n--structure waveguide; optical waveguide coupling; p+- i- n-structure waveguide; propagation loss;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850421
