Optical and electrical measurements of a-SiC:H/c-Si heterojunctions prepared by plasma enhanced chemical vapour deposition

Author

Lo, T.C. ; Huang, Howard C.

Author_Institution

Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

Volume

28

Issue

15

fYear

1992

fDate

7/16/1992 12:00:00 AM

Firstpage

1423

Lastpage

1424

Abstract

A series of optical and electrical measurements of a-SiC:H/c-Si heterojunctions prepared by a parallel-plate plasma-enhanced chemical vapor deposition system are reported. All the samples underwent various passivation processes. It is observed that in situ H₂/Ar plasma prior cleaning and H₂ plasma annealing can reduce the dark current of the heterojunction by three orders of magnitude. Higher process pressure and lower power density also favour good interface properties.

Keywords

amorphous semiconductors; electric current measurement; hydrogen; optical variables measurement; plasma CVD; semiconductor junctions; semiconductor thin films; silicon; silicon compounds; H₂ plasma annealing; H₂-Ar plasma cleaning; PECVD; SiC:H-Si; amorphous SiC:H; amorphous semiconductors; crystalline Si; dark current; electrical measurements; interface properties; optical measurements; passivation; plasma enhanced chemical vapour deposition; plasma prior cleaning; power density; process pressure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920905

Filename

256052