Title :
InGaAs/InGaAsP/InP strained-layer quantum well lasers at approximately 2 mu m
Author :
Forouhar, S. ; Ksendzov, A. ; Larsson, A. ; Temkin, H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
7/16/1992 12:00:00 AM
Abstract :
The first successful operation of InGaAs strained layer quantum well (SL-QW) injection lasers at approximately 2 mu m is reported. The threshold current density and the external differential quantum efficiency of 5 mu m wide and 800 mu m long ridge waveguide lasers were 2.5kA/cm2 and 6%, respectively. The devices had a reverse leakage current of less than 20 mu A at -1 V indicating epitaxial layers with low defect density.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; -1 V; 2 micron; 20 muA; 5 micron; 6 percent; 800 micron; InGaAs-InGaAsP-InP; InP substrates; epitaxial layers; external differential quantum efficiency; injection lasers; low defect density; operation; reverse leakage current; ridge waveguide lasers; semiconductors; strained-layer quantum well lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920910
