DocumentCode :
1003530
Title :
Room temperature negative differential resistance of metal (CoSi2)/insulator (CaF2) resonant tunnelling diode
Author :
Suemasu, Takashi ; Watanabe, Manabu ; Asada, Minoru ; Suzuki, Nobuhiro
Author_Institution :
Tokyo Inst. of Technol., Japan
Volume :
28
Issue :
15
fYear :
1992
fDate :
7/16/1992 12:00:00 AM
Firstpage :
1432
Lastpage :
1434
Abstract :
The first room temperature negative differential resistance in a nanometre-thick metal (CoSi2)/insulator (CaF2) resonant tunneling diode is reported. This device consists of heterostructures with two metallic (CoSi2) wells and three insulator (CaF2) barriers grown on n-Si
Keywords :
calcium compounds; cobalt compounds; metal-insulator-semiconductor devices; negative resistance; resonant tunnelling devices; superlattices; tunnel diodes; 0.9 nm; 1.9 nm; 300 K; 77 K; CoSi 2-CaF 2-Si; MISD; Si substrate; heterostructures; insulator barriers; metallic wells; nanometre-thick metal; peak to valley current ratios; resonant tunnelling diode; room temperature negative differential resistance; silicides; ultra thin layers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920911
Filename :
256058
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1003530
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