Title :
Reproducible low-resistivity AuMn ohmic contact for p-type GaAs
Author :
Dubon-Chevallier, C. ; Duchenois, A.M. ; Bresse, J.F. ; Ankri, D.
Author_Institution :
Centre National d´Etudes des Télécommunications, PAB Laboratoire de Bagneux, Bagneux, France
Abstract :
A novel ohmic contact 96% Au-4% Mn has been established for p-type GaAs. A specific contact resistivity of 2 × 10¿7 ¿cm2 has been obtained on 2 × 1019 cm¿3 epitaxial layers after alloying, and a resistivity of 2 × 10¿6 ¿cm2 has been obtained on 2 × 1020 cm¿3 doped layers without alloying. The contact is stable and reproducible.
Keywords :
III-V semiconductors; gallium arsenide; gold alloys; manganese alloys; ohmic contacts; Au-Mn; GaAs; III-V semiconductors; ohmic contact; p-type; reproducible low-resistivity contact;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850433
