DocumentCode
1003542
Title
Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration
Author
Liu, Y.M. ; Prucnal, Paul R.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Volume
28
Issue
15
fYear
1992
fDate
7/16/1992 12:00:00 AM
Firstpage
1434
Lastpage
1435
Abstract
The fabrication and characterisation of deeply-etched single-mode GeSi rib waveguides grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of approximately 2.5+or-1 dB/cm at 1.3 mu m.
Keywords
Ge-Si alloys; integrated optics; integrated optoelectronics; optical losses; optical waveguides; 1.3 micron; GeSi rib waveguides; GeSi-Si; RIB waveguides; Si based optoelectronic integration; Si substrate; characterisation; confinement; deeply etched waveguides; fabrication; monolithic optoelectronic integration; propagation loss; single mode waveguides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920912
Filename
256059
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