• DocumentCode
    1003582
  • Title

    Comparison of instabilities observed in electrical characteristics of silicon-on-insulator MOSFETs, both above and below threshold voltage

  • Author

    McDaid, Liam J. ; Hall, Sebastian ; Nuttall, K.I. ; Eccleston, W.

  • Author_Institution
    Liverpool Univ., UK
  • Volume
    28
  • Issue
    15
  • fYear
    1992
  • fDate
    7/16/1992 12:00:00 AM
  • Firstpage
    1441
  • Lastpage
    1442
  • Abstract
    A simple model is presented to analyse the consequences of the body potential on electrical instabilities in SOI MOSFETs. The analysis accounts for both the regenerative and nonregenerative behaviour that is typically observed in these devices and relates them to the bias condition and critical device parameters.
  • Keywords
    CMOS integrated circuits; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; CMOS; SOI MOSFETs; Si-SiO 2; above threshold voltage; analysis; below threshold voltage; bias condition; body potential; critical device parameters; electrical characteristics; electrical instabilities; model; nonregenerative behaviour; regenerative behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920917
  • Filename
    256062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003582