Title :
Comparison of instabilities observed in electrical characteristics of silicon-on-insulator MOSFETs, both above and below threshold voltage
Author :
McDaid, Liam J. ; Hall, Sebastian ; Nuttall, K.I. ; Eccleston, W.
Author_Institution :
Liverpool Univ., UK
fDate :
7/16/1992 12:00:00 AM
Abstract :
A simple model is presented to analyse the consequences of the body potential on electrical instabilities in SOI MOSFETs. The analysis accounts for both the regenerative and nonregenerative behaviour that is typically observed in these devices and relates them to the bias condition and critical device parameters.
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; CMOS; SOI MOSFETs; Si-SiO 2; above threshold voltage; analysis; below threshold voltage; bias condition; body potential; critical device parameters; electrical characteristics; electrical instabilities; model; nonregenerative behaviour; regenerative behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920917
