Title :
Dual spot visible laser diodes
Author :
Geels, R.S. ; Welch, D.F. ; Scifres, D.R. ; Bour, D.P. ; Treat, D.W. ; Bringans, R.D.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
7/16/1992 12:00:00 AM
Abstract :
Room temperature, continuous wave operation of independently addressable, dual spot, single spatial mode GaInP laser diodes emitting at 675 nm is reported. Threshold currents of 30mA and singlemode output powers exceeding 30 mW per emitter have been obtained. Crosstalk between emitters is as low a 0.3% with a 50 mu m centre to centre spacing.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; laser transitions; semiconductor junction lasers; 30 mA; 38 mW; GaInP; continuous wave operation; dual spot; independently addressable; room temperature operation; semiconductor lasers; single spatial mode; singlemode output powers; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920929
