• DocumentCode
    1003766
  • Title

    High Speed MOSFET Circuits Using Advanced Lithography

  • Author

    Critchlow, D.L.

  • Author_Institution
    IBM
  • Volume
    9
  • Issue
    2
  • fYear
    1976
  • Firstpage
    31
  • Lastpage
    37
  • Abstract
    During the last decade we have seen a dramatic increase in the complexity of silicon integrated circuit chips, particularly in memory. The n-channel FET technology is dominant in main memory and in lower performance logic and arrays (i.e., read-only memory and buffers) because of its higher circuit density and simpler processing, whereas bipolar transistor technology dominates for high-performance logic and arrays.
  • Keywords
    FETs; Integrated circuit technology; Lithography; Logic arrays; Logic circuits; MOSFET circuits; Technological innovation; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Computer
  • Publisher
    ieee
  • ISSN
    0018-9162
  • Type

    jour

  • DOI
    10.1109/C-M.1976.218503
  • Filename
    1647278