DocumentCode :
1003766
Title :
High Speed MOSFET Circuits Using Advanced Lithography
Author :
Critchlow, D.L.
Author_Institution :
IBM
Volume :
9
Issue :
2
fYear :
1976
Firstpage :
31
Lastpage :
37
Abstract :
During the last decade we have seen a dramatic increase in the complexity of silicon integrated circuit chips, particularly in memory. The n-channel FET technology is dominant in main memory and in lower performance logic and arrays (i.e., read-only memory and buffers) because of its higher circuit density and simpler processing, whereas bipolar transistor technology dominates for high-performance logic and arrays.
Keywords :
FETs; Integrated circuit technology; Lithography; Logic arrays; Logic circuits; MOSFET circuits; Technological innovation; Threshold voltage;
fLanguage :
English
Journal_Title :
Computer
Publisher :
ieee
ISSN :
0018-9162
Type :
jour
DOI :
10.1109/C-M.1976.218503
Filename :
1647278
Link To Document :
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