DocumentCode
1003766
Title
High Speed MOSFET Circuits Using Advanced Lithography
Author
Critchlow, D.L.
Author_Institution
IBM
Volume
9
Issue
2
fYear
1976
Firstpage
31
Lastpage
37
Abstract
During the last decade we have seen a dramatic increase in the complexity of silicon integrated circuit chips, particularly in memory. The n-channel FET technology is dominant in main memory and in lower performance logic and arrays (i.e., read-only memory and buffers) because of its higher circuit density and simpler processing, whereas bipolar transistor technology dominates for high-performance logic and arrays.
Keywords
FETs; Integrated circuit technology; Lithography; Logic arrays; Logic circuits; MOSFET circuits; Technological innovation; Threshold voltage;
fLanguage
English
Journal_Title
Computer
Publisher
ieee
ISSN
0018-9162
Type
jour
DOI
10.1109/C-M.1976.218503
Filename
1647278
Link To Document