DocumentCode
1003790
Title
Low threshold current density 1.5 mu m (In, Ga, Al)As quantum well lasers grown by MBE
Author
Peters, M.G. ; Coldren, Larry A.
Volume
28
Issue
15
fYear
1992
fDate
7/16/1992 12:00:00 AM
Firstpage
1471
Lastpage
1472
Abstract
The use of strained ternary and quaternary (In, Ga, Al) quantum wells for the active regions in MBE grown 1.5 mu m lasers has been compared. Threshold current densities as low as 530 A/cm2 were obtained using compressively strained (In, Ga, Al)As quaternary quantum wells with waveguide losses of 9.4 cm-1 and a current injection efficiency of 83 %. These results represent the best (Al, Ga, In)As/InP quantum well lasers grown by MBE.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; optical losses; optical waveguides; semiconductor junction lasers; 1.5 micron; 83 percent; AlGaInAs-InP; MBE; active regions; compressively strained; current injection efficiency; low threshold current density; optical fibre communication wavelength; quantum well lasers; quaternary quantum wells; semiconductor lasers; waveguide losses;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920936
Filename
256081
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