Title :
50 nm line fabrication in 0.5 ¿m PMMA film on silicon substrates with a 20 kV e-beam
Author :
Yamashita, Hiromasa ; Todokoro, Y.
Author_Institution :
Matsushita Electronics Corporation, Semiconductor R&D Center, Nagaokakyo, Japan
Abstract :
With an isopropyl alcohol (IPA) development, 50¿100 nm lines are fabricated in 0.5 ¿m PMMA film on silicon substrates with a 20 kV e-beam. The slope of solubility rate in an IPA development is 10.2 at a high electron dose. A higher contrast and an improved resolution are obtained by using an IPA development.
Keywords :
electron beam lithography; electron resists; polymers; 20 kV electron beam; PMMA film; Si substrates; contrast; electron dose; isopropyl alcohol; line fabrication; resolution; solubility rate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850458
