Origin of effective anisotropy field change induced by ion implantation in magnetic garnet films

Author

Takeuchi, T. ; Ohta, N. ; Sugita, Y.

Author_Institution

Central Research Laboratory, Hitachi, Kokubunji, Tokyo, Japan

Volume

20

Issue

5

fYear

1984

fDate

9/1/1984 12:00:00 AM

Firstpage

1108

Lastpage

1110

Abstract

The origin of effective anisotropy field change induced by ion implantation in magnetic garnet films has been investigated using films with uniform strains. Uniform strains were produced by ion implantation into very thin (600 A) garnet films. Using such ion-implanted samples, strain, saturation induction 4πMs, magnetostriction coefficient λ111and effective anisotropy field change Δ(Hk-4πMs) were measured. It was found that Δ(Hk-4πMs) is mainly brought about by the magnetostriction effect for both H2+ and Ne+ implantations. Different dependences of Δ(Hk-4πMs) on strain between H2+ and Ne+ implantations are attributed to different dependences of λ111and 4πMs. A large value of Δ(Hk-4πMs) for H2+ implantation originates from a large magnitude of λ111.

Keywords

Magnetic anisotropy; Magnetic bubble device fabrication; Magnetostriction; Anisotropic magnetoresistance; Garnet films; Ion implantation; Magnetic anisotropy; Magnetic field induced strain; Magnetic films; Magnetostriction; Perpendicular magnetic anisotropy; Saturation magnetization; Strain measurement;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.1984.1063286

Filename

1063286