Title :
Improvement of InP MISFET characteristics using infra-red lamp annealing
Author :
Hirota, Yusuke ; Okamura, M. ; Hisaki, T. ; Mikami, Osamu
Author_Institution :
NTT, Furukawa Research Section, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
An infra-red lamp-annealing technique was employed for postannealing Si ion-implanted InP substrates. The effective electron mobility (¿eff) of SiO2-InP metal-insulator-semiconductor field-effect transistors fabricated using infrared lamp annealing is remarkably temperature-dependent. The maximum ¿eff is ¿ 11000 cm2/Vs at 75 K and 1500¿2500 cm2/Vs at room temperature.
Keywords :
III-V semiconductors; annealing; indium compounds; insulated gate field effect transistors; ion implantation; semiconductor technology; IR lamp annealing; InP MISFET characteristics; SiO2-InP metal-insulator-semiconductor field-effect transistors; electron mobility; ion implantation; post-annealing Si ion-implanted InP substrates; semiconductor technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850486
