DocumentCode
1004091
Title
High power, low threshold, singlemode 630 nm laser diodes
Author
Geels, R.S. ; Welch, D.F. ; Scifres, D.R. ; Bour, D.P. ; Treat, D.W. ; Bringans, R.D.
Author_Institution
Spectra Diode Labs., San Jose, CA, USA
Volume
28
Issue
19
fYear
1992
Firstpage
1810
Lastpage
1811
Abstract
Output powers exceeding 45 mW under room temperature, continuous wave operation and threshold currents as low as 30 mA are demonstrated in singlemode AlGaInP visible laser diodes emitting at 636 nm. Singlemode operation is maintained at output powers exceeding 40 mW.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; 30 mA; 45 mW; 630 nm; AlGaInP; continuous wave operation; high power; laser diodes; room temperature; semiconductors; singlemode; threshold currents; visible lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921154
Filename
256112
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