• DocumentCode
    1004158
  • Title

    Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells

  • Author

    Perrin, S.D. ; Spurdens, P.C.

  • Volume
    28
  • Issue
    19
  • fYear
    1992
  • Firstpage
    1819
  • Lastpage
    1821
  • Abstract
    Buried heterostructure lasers with 4, 8 and 16 compressively strained InGaAsP quantum wells have been fabricated. A record low threshold current of 3.1 mA has been obtained and thresholds for all devices are lower than for lasers with wells of compressively strained or lattice-matched InxGa1-xAs. High output powers of over 60 mW per facet have been measured.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 3.1 mA; 60 mW; InGaAsP quantum wells; MQW; MQW lasers; buried heterostructure; multiple quantum wells; output power; semiconductors; strained wells; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921160
  • Filename
    256118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004158