DocumentCode :
1004158
Title :
Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells
Author :
Perrin, S.D. ; Spurdens, P.C.
Volume :
28
Issue :
19
fYear :
1992
Firstpage :
1819
Lastpage :
1821
Abstract :
Buried heterostructure lasers with 4, 8 and 16 compressively strained InGaAsP quantum wells have been fabricated. A record low threshold current of 3.1 mA has been obtained and thresholds for all devices are lower than for lasers with wells of compressively strained or lattice-matched InxGa1-xAs. High output powers of over 60 mW per facet have been measured.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 3.1 mA; 60 mW; InGaAsP quantum wells; MQW; MQW lasers; buried heterostructure; multiple quantum wells; output power; semiconductors; strained wells; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921160
Filename :
256118
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1004158
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