DocumentCode
1004256
Title
Defect-free modulator at 1.06 mu m using a strain-balanced multiquantum well
Author
Goossen, K.W. ; Cunningham, John E. ; Jan, W.Y.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
28
Issue
19
fYear
1992
Firstpage
1833
Lastpage
1834
Abstract
Recently, the authors reported defect-free, InGaAs-GaAsP multiquantum well modulators operating at 1015 nm, but with an unusual dual-peak spectra that resulted in slight degradation in performance. Now they report a similar sample grown under reactor gas overpressure that has normal spectra. The dual-peak spectra are therefore attributed to microscopic domain formation that the gas overpressure inhibits by reducing surface atom mobility. The operation has also been extended to 1.06 mu m, the Nd:YAG wavelength.
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; 1015 to 1060 nm; InGaAs-GaAsP; MQW modulators; defect-free type; dual-peak spectra; microscopic domain formation; reactor gas overpressure; strain-balanced multiquantum well; surface atom mobility reduction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921169
Filename
256127
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