• DocumentCode
    1004256
  • Title

    Defect-free modulator at 1.06 mu m using a strain-balanced multiquantum well

  • Author

    Goossen, K.W. ; Cunningham, John E. ; Jan, W.Y.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    28
  • Issue
    19
  • fYear
    1992
  • Firstpage
    1833
  • Lastpage
    1834
  • Abstract
    Recently, the authors reported defect-free, InGaAs-GaAsP multiquantum well modulators operating at 1015 nm, but with an unusual dual-peak spectra that resulted in slight degradation in performance. Now they report a similar sample grown under reactor gas overpressure that has normal spectra. The dual-peak spectra are therefore attributed to microscopic domain formation that the gas overpressure inhibits by reducing surface atom mobility. The operation has also been extended to 1.06 mu m, the Nd:YAG wavelength.
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; 1015 to 1060 nm; InGaAs-GaAsP; MQW modulators; defect-free type; dual-peak spectra; microscopic domain formation; reactor gas overpressure; strain-balanced multiquantum well; surface atom mobility reduction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921169
  • Filename
    256127