Title :
Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier
Author :
Hamada, Hiroyuki ; Tominaga, Kazuhiro ; Shono, M. ; Honda, Shogo ; Yodoshi, K. ; Yamaguchi, Toru
Author_Institution :
Sanyo Electric Co. Ltd., Osaka, Japan
Abstract :
610 nm band AlGaInP compressively strained multiquantum-well laser diodes with a multiquantum barrier have been successfully fabricated by MOCVD using
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 25 degC; 610 nm; 615 nm; AlGaInP; CW operation; GaAs; MOCVD; compressively strained MQW; laser diodes; multiquantum barrier; multiquantum well; room temperature operation; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921170
