DocumentCode
1004317
Title
Numerical simulation of carrier transport in Schottky barrier diodes
Author
Shibkov, Andrei ; Ershov, Maxim ; Ryzhii, Victor
Author_Institution
Inst. of Phys. & Technol., Acad. of Sci., Moscow, Russia
Volume
28
Issue
19
fYear
1992
Firstpage
1841
Lastpage
1842
Abstract
Carrier transport in Si Schottky diodes is analysed. A novel model for the recombination velocity suitable both for low and high biases has been derived and compared with previous models. The influence of the boundary condition on simulation results was found to be more significant for C-V than for I-V characteristics.
Keywords
Schottky-barrier diodes; carrier mobility; electron-hole recombination; elemental semiconductors; semiconductor device models; silicon; C-V characteristics; I-V characteristics; Schottky barrier diodes; Si; boundary condition; carrier transport; high bias; low bias; model; recombination velocity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921174
Filename
256132
Link To Document