Title :
Effect of nonlinear gain on the bandwidth of semiconductor lasers
Author :
Olshansky, R. ; Fye, D.M. ; Manning, John ; Su, C.B.
Author_Institution :
GTE Laboratories Incorporated, Optoelectronic Devices, Waltham, USA
Abstract :
The effect of nonlinear gain on the frequency response of semiconductor lasers at high bias powers is analysed using the multimode rate equations. In spite of the strong damping of the relaxation oscillations due to nonlinear gain, bandwidths of over 40 GHz appear to be attainable in semiconductor lasers.
Keywords :
laser theory; optical modulation; semiconductor junction lasers; bandwidth; frequency response; high bias powers; multimode rate equations; nonlinear gain; relaxation oscillations; semiconductor lasers; small signal modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850509
