• DocumentCode
    1004412
  • Title

    High-power InGaAsP edge-emitting LEDs for single-mode optical communication systems

  • Author

    Olshansky, R. ; Fye, D. ; Manning, John ; Stern, M. ; Meland, E. ; Powazinik, W. ; Ulbricht, L. ; Lauer, R.

  • Author_Institution
    GTE Laboratories, Inc., Optoelectronic Devices Department, Waltham, USA
  • Volume
    21
  • Issue
    17
  • fYear
    1985
  • Firstpage
    730
  • Lastpage
    731
  • Abstract
    The letter describes 1.3 ¿m InGaAsP edge-emitting LEDs which couple 40 to 60 ¿W into a single-mode fibre. The 1.0 ns rise times and 30 to 45 nm spectral widths of these LEDs make suitable for optical communication systems operating at data rates as high as 400 Mbit/s.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; optical communication equipment; InGaAsP edge-emitting LEDs; rise time 1 ns; single-mode fibre; single-mode optical communication systems; spectral width 30 to 45 nm; wavelength 1.3 microns;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850515
  • Filename
    4250724