Title :
High-power InGaAsP edge-emitting LEDs for single-mode optical communication systems
Author :
Olshansky, R. ; Fye, D. ; Manning, John ; Stern, M. ; Meland, E. ; Powazinik, W. ; Ulbricht, L. ; Lauer, R.
Author_Institution :
GTE Laboratories, Inc., Optoelectronic Devices Department, Waltham, USA
Abstract :
The letter describes 1.3 ¿m InGaAsP edge-emitting LEDs which couple 40 to 60 ¿W into a single-mode fibre. The 1.0 ns rise times and 30 to 45 nm spectral widths of these LEDs make suitable for optical communication systems operating at data rates as high as 400 Mbit/s.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; optical communication equipment; InGaAsP edge-emitting LEDs; rise time 1 ns; single-mode fibre; single-mode optical communication systems; spectral width 30 to 45 nm; wavelength 1.3 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850515
