DocumentCode
1004412
Title
High-power InGaAsP edge-emitting LEDs for single-mode optical communication systems
Author
Olshansky, R. ; Fye, D. ; Manning, John ; Stern, M. ; Meland, E. ; Powazinik, W. ; Ulbricht, L. ; Lauer, R.
Author_Institution
GTE Laboratories, Inc., Optoelectronic Devices Department, Waltham, USA
Volume
21
Issue
17
fYear
1985
Firstpage
730
Lastpage
731
Abstract
The letter describes 1.3 ¿m InGaAsP edge-emitting LEDs which couple 40 to 60 ¿W into a single-mode fibre. The 1.0 ns rise times and 30 to 45 nm spectral widths of these LEDs make suitable for optical communication systems operating at data rates as high as 400 Mbit/s.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; optical communication equipment; InGaAsP edge-emitting LEDs; rise time 1 ns; single-mode fibre; single-mode optical communication systems; spectral width 30 to 45 nm; wavelength 1.3 microns;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850515
Filename
4250724
Link To Document