Title :
Radiative efficiency in low-dimensional semiconductor structures
Author :
Burt, M.G. ; Taylor, R.I.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
The ratio of the spontaneous emission and Auger recombination rates for quantum wells and wires is compared theoretically with that for bulk structures. Dramatic improvements in radiative efficiency are not predicted for these novel structures unless carrier densities are greatly reduced.
Keywords :
Auger effect; electron-hole recombination; laser theory; luminescence of inorganic solids; semiconductor junction lasers; semiconductor superlattices; Auger recombination rates; carrier densities; low-dimensional semiconductor structures; quantum wells; radiative efficiency; semiconductor lasers; spontaneous emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850517
