DocumentCode
1004506
Title
Low-threshold-current CW operation of 1.5 ¿m GaInAsP/InP bundle-integrated-guide distributed-Bragg-reflector (BIG-DBR) lasers
Author
Tohmori, Y. ; Komori, Kenji ; Arai, Shigehisa ; Suematsu, Yasuharu
Author_Institution
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Volume
21
Issue
17
fYear
1985
Firstpage
743
Lastpage
745
Abstract
Low-threshold-current and high-power operation of 1.5 ¿m GaInAsP/InP bundle-integrated-guide (BIG) DBR lasers were obtained. A single-mode operation temperature range of more than 70 deg was demonstrated around room temperature by shortening the active region to 100 ¿m. The modulation characteristic was measured up to 2 GHz with a modulation depth of 100%. A maximum value of dynamic wavelength shift was 2 Å at 1.2 times threshold current.
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; GaInAsP-InP bundle integrated guide DBR laser; active region; dynamic wavelength shift; high-power operation; low threshold current CW operation; modulation characteristic; modulation depth; semiconductor junction laser; single-mode operation temperature range; wavelength 1.5 microns;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850524
Filename
4250733
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