Title :
MOCVD-grown AlGaAs/GaAs hot-electron transistor with a base width of 30 nm
Author :
Hase, I. ; Kawai, Hiroyuki ; Imanaga, S. ; Kaneko, Kunihiko ; Watanabe, N.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
An AIGaAs/GaAs hot-electron transistor (HET) with a base width of 30 nm was successfully fabricated by MOCVD. The common-emitter current gain increased gradually with base-collector voltage, and reached a level of 1.6 at 77 K and 2.0 at 4.2 K. This current gain is the highest and this base width is the thinnest among those reported so far on the AIGaAs/GaAs HET.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; hot carriers; vapour phase epitaxial growth; 30 nm base width; AlGaAs/GaAs; HET; III-V semiconductors; MOCVD; VPE; bipolar transistor; current gain improvement; epitaxial growth; hot-electron transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850533
