DocumentCode :
1004616
Title :
Electrical properties of Si-implanted gate oxides
Author :
Kim, Jung-Ho ; Joshi, A.B. ; Lo, G.Q. ; Kwong, D.L. ; Lee, Sang-Rim
Volume :
29
Issue :
1
fYear :
1993
fDate :
1/7/1993 12:00:00 AM
Firstpage :
34
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930022
Filename :
256166
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1004616
