Title :
Low-threshold MBE GaAs/AlGaAs quantum well lasers with dry-etched mirrors
Author :
Mannoh, M. ; Yuasa, Takeshi ; Asakawa, K. ; Shinozaki, Koichi ; Ishii, M.
Author_Institution :
Optoelectronics Joint Research Laboratory, Kawasaki, Japan
Abstract :
An index-guided GaAs/AlGaAs multiquantum well laser with etched mirrors has been fabricated by molecular beam epitaxy and a dry etching process. The transverse mode is stabilised by a built-in optical waveguide, which is formed on the substrates with a pair of grooves. The etched mirrors are fabricated by reactive ion beam etching. The lasers with 200 ¿m-long cavities exhibit threshold currents as low as 30 mA and external differential quantum efficiencies as high as 41%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; molecular beam epitaxial growth; optical waveguides; semiconductor growth; semiconductor junction lasers; sputter etching; GaAs/AlGaAs; III-V semiconductors; MBE; RIE; dry-etched mirrors; integrated optics; lateral waveguide structure; low threshold type; molecular beam epitaxy; multiquantum well laser; reactive ion beam etching; semiconductor lasers; transverse mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850542
