Title :
GaAlAs semiconductor diode laser 4-ary frequency shift key modulation at 100 Mbit/s
Author :
Welford, D. ; Alexander, S.B.
Author_Institution :
MIT Lincoln Laboratory, Lexington, USA
Abstract :
4-ary FSK modulation of a semiconductor diode laser by injection current modulation has been demonstrated at a rate of 100 Mbit/s. The injection current modulator has a modular design which allows expansion to M-ary FSK with independent control of each tone frequency. The design allows considerable flexibility in the logical relationship between the source data and the selected frequency tones.
Keywords :
III-V semiconductors; frequency shift keying; optical modulation; semiconductor junction lasers; 100 Mbit/s; 4-ary FSK modulation; GaAlAs; III-V semiconductors; frequency tones; injection current modulation; semiconductor diode laser; tone frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850008
