Title :
Hot-hole-induced degradation in depletion-mode n-channel MOSFETs
Author :
Stoev, I. ; Bauer, Florian ; Balk, P.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, SFB 202, Aachen, West Germany
Abstract :
Injection and trapping of hot holes was studied in n-channel depletion-mode MOSFETs and compared to that in enhancement devices. The rate of device degradation was found to decrease with increasing channel doping. A model is proposed explaining this behaviour from the current transport in the buried channel and from the effect of the channel doping level on the field near the drain.
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor device models; channel doping; current transport; depletion-mode n-channel MOSFETs; device degradation; doping level; hot holes; model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850024
