Title :
Determination of drift mobility and carrier concentration in semiconductors using surface acoustic wave amplifier structure
Author :
Baudrand, H. ; Taha, T.E. ; Benslama, M.
Author_Institution :
ENSEEIHT, Laboratoire de Microondes, Toulouse, France
Abstract :
Experimental data are analysed in order to determine the electric field at which the synchronism occurs in a semiconductor piezoelectric amplifier structure. In the interaction region the electron mobility of a sample of high resistivity silicon is measured to be in the order of 1268 cm2/Vs. The carrier concentration is deduced as a result of the comparison between the experimental and theoretical results.
Keywords :
carrier mobility; piezoelectric devices; semiconductors; surface acoustic wave devices; carrier concentration; drift mobility; electric field; electron mobility; piezoelectric amplifier structure; semiconductors; surface acoustic wave amplifier structure; synchronism;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850025
