Title :
Gain characteristics of a 1.5 μm DCPBH InGaAsP resonant optical amplifier
Author :
Westlake, H.J. ; O´Mahony, M.J.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
The results of measurements on a 1.5 μm resonant optical amplifier are reported. A maximum gain of 25 dB was measured when the wavelength of the input signal matched the central mode in the amplifier spectrum. The input gain saturation power was -41 dBm, but this increased to -25 dBm when the source wavelength was increased by 15 nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; InGaAsP; double channel planar buried heterostructure; input gain saturation power; maximum gain; resonant optical amplifier; source wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850026
