Title :
Low threshold current operation of vapour-grown 650 nm-band InGaAsP/InGaP DH lasers
Author :
Usui, A. ; Matsumoto, Tad ; Inai, M. ; Mito, I. ; Kobayashi, Kaoru ; Watanbe, H.
Author_Institution :
NEC Corporation, Fundamental Research Laboratories, Kawasaki, Japan
Abstract :
InGaAsP/InGaP double heterojunction lasers emitting in the 650 nm band have been fabricated on GaAs0.61P0.39 substrates by hydride vapour-phase epitaxy. By optimising growth conditions and device structure, a threshold current density as low as 5.6 kA/cm2 is obtained, and CW operation is achieved up to ¿27° C.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 650 nm band; CW operation; GaAs0.61P0.39 substrates; InGaAsP/InGaP double heterojunction lasers; growth conditions; hydride vapour-phase epitaxy; semiconductor laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850038
