• DocumentCode
    1005359
  • Title

    Band-to-band Auger processes in 0.95 eV bandgap (λ=1.3 μm) (AlxGa1-x)0.48In0.52As lattice matched to InP

  • Author

    Bardyszewski, W. ; Yevick, D.

  • Author_Institution
    University of Lund, Department of Theoretical Physics, Lund, Sweden
  • Volume
    21
  • Issue
    2
  • fYear
    1985
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    We calculate the temperature dependence of the CHSH and CHCC pure collision and photon-assisted Auger coefficients for highly excited Al0.13Ga0.35In0.52As (λ=1.3 μm). Our method incorporates refined kp wavefunction overlap integrals, spectral density functions and integration techniques. The predicted room-temperature AlGaInAs Auger coefficient is slightly smaller than that of 1.3 /sub mu/m InGaAsP.
  • Keywords
    Auger effect; III-V semiconductors; aluminium compounds; band structure of crystalline semiconductors and insulators; electron-hole recombination; gallium arsenide; indium compounds; semiconductor epitaxial layers; 0.95 eV bandgap; CHCC; CHSH; III-V semiconductor; InP; band band Auger processes; band structure; collision Auger coefficients; epitaxial layers; integration techniques; kp wavefunction overlap integrals; lattice matching; photon-assisted Auger coefficients; spectral density functions; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850040
  • Filename
    4250846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005359