Title :
InGaAsP/InP double heterostructure lasers grown by atmospheric-pressure MOCVD
Author :
Dupuis, Russell ; Temkin, H. ; Hopkins, L.C.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapour deposition is reported. Optically pumped laser operation at 1.36 ¿m and 1.45 ¿m has been achieved and broad-area injection lasers operating at 1.37 ¿m with threshold current densities as low as 3.6 kA/cm2 have been demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.36 microns; 1.37 microns; 1.45 microns; InGaAsP/InP double heterostructure lasers; atmospheric-pressure MOCVD; broad-area injection lasers; epitaxial structures; optically pumped laser operation; room temperature operation; semiconductor laser; threshold current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850042
