DocumentCode :
1005396
Title :
Etched-mirror unstable-resonator semiconductor lasers
Author :
Craig, R.R. ; Casperson, Lee W. ; Stafsudd, O.M. ; Yang, J.J.J. ; Evans, G.A. ; Davidheiser, R.A.
Author_Institution :
University of California, Department of Electrical Engineering, Los Angeles, USA
Volume :
21
Issue :
2
fYear :
1985
Firstpage :
62
Lastpage :
63
Abstract :
The operation and performance of the first etched-mirror high-loss (ray unstable) semiconductor diode lasers are reported and discussed. This is an alternate approach to conventional plane-parallel stripe geometry diode lasers or monolithic laser arrays for obtaining improved mode control and higher power.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; laser accessories; laser cavity resonators; laser modes; mirrors; semiconductor junction lasers; GaAs-GaAlAs laser; etched mirror unstable resonator semiconductor lasers; mode control; power characteristics;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850043
Filename :
4250850
Link To Document :
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