• DocumentCode
    1005396
  • Title

    Etched-mirror unstable-resonator semiconductor lasers

  • Author

    Craig, R.R. ; Casperson, Lee W. ; Stafsudd, O.M. ; Yang, J.J.J. ; Evans, G.A. ; Davidheiser, R.A.

  • Author_Institution
    University of California, Department of Electrical Engineering, Los Angeles, USA
  • Volume
    21
  • Issue
    2
  • fYear
    1985
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    The operation and performance of the first etched-mirror high-loss (ray unstable) semiconductor diode lasers are reported and discussed. This is an alternate approach to conventional plane-parallel stripe geometry diode lasers or monolithic laser arrays for obtaining improved mode control and higher power.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium arsenide; laser accessories; laser cavity resonators; laser modes; mirrors; semiconductor junction lasers; GaAs-GaAlAs laser; etched mirror unstable resonator semiconductor lasers; mode control; power characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850043
  • Filename
    4250850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005396