DocumentCode :
10054
Title :
Enhanced Breakdown Voltage With High Johnson\´s Figure-of-Merit in 0.3- 
T-gate AlGaN/GaN HEMTs on Silicon by <sub>2</sub>S<sub>x</sub>]-treated AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate without compromising the unit gain cutoff frequencies. About six times higher OFF -state breakdown voltage (BV<sub>gd</sub>) and three orders of magnitude higher I<sub>ON</sub>/I<sub>OFF</sub> ratio were observed in the (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-treated 0.3- μm T-gate conventional AlGaN/GaN HEMTs on Si substrate. In addition, three orders of magnitude lower surface leakage current (~3.0 μA/mm to ~3 nA/mm) have also been observed on the (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-treated devices. The calculated Johnson´s figures of merit (J-FOM = BV<sub>gd</sub> × f<sub>T</sub>) is 5.41 × 10<sup>12</sup> V/s, which is the highest value reported so far for 0.3- μm T-gate conventional SiN passivated AlGaN/GaN HEMTs without the incorporation of field plate. No significant drain current collapse was observed on the (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-treated devices.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device breakdown; wide band gap semiconductors; AlGaN-GaN; Johnson figure-of-merit; Si; T-gate AlGaN/GaN HEMT; ammonium sulfide treatment; enhanced off-state breakdown voltage; high electron mobility transistors; size 0.3 mum; surface leakage current; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Silicon; Silicon compounds; Substrates; AlGaN/GaN; HEMT; breakdown voltage <formula formulatype=)
$({rm BV}_{rm gd}) ({rm NH}_{4})_{2}{rm S}_{x}$ passivation; cutoff frequency; johnson\´s figures of merit (J-FOM);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2279882
Filename :
6600863
Link To Document :
