Title :
500 GHz GaAs MMIC sampling wafer probe
Author :
Shakouri, M.S. ; Black, A. ; Auld, B.A. ; Bloom, D.M.
Author_Institution :
Stanford Univ., CA, USA
fDate :
3/18/1993 12:00:00 AM
Abstract :
A 500 GHz bandwidth GaAs MMIC sampling wafer probe is reported which incorporates a mechanical flexure and a micromachined GaAs IC for time domain on-wafer measurements. The GaAs IC incorporates a novel high speed pulse sharpener and a two-diode sampling bridge with a micromachined GaAs tip.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit testing; microwave measurement; probes; 500 GHz; GaAs; MMIC; high speed pulse sharpener; mechanical flexure; micromachined GaAs IC; micromachined GaAs tip; monolithic microwave IC; sampling wafer probe; time domain on-wafer measurements; two-diode sampling bridge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930372
