• DocumentCode
    1005552
  • Title

    Optical time domain reflectometer using a photon-counting InGaAs/InP avalanche photodiode at 1.3 μm

  • Author

    Levine, B.F. ; Bethea, C.G. ; Cohen, L.G. ; Campbell, Joe C. ; Morris, G.D.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    21
  • Issue
    2
  • fYear
    1985
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    We report the first photon-counting optical time domain reflectometer using an InGaAsInP avalanche photodiode. The measured sensitivity at a temperature of -40°C is comparable to that of the best present conventional PINFET receiver results.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photon counting; time-domain reflectometry; 1.3 microns; optical time domain reflectometer; photon-counting InGaAs/InP avalanche photodiode; sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850057
  • Filename
    4250865
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005552