Title :
4*4 directional coupler switch matrix with an InGaAlAs/InAlAs multiquantum well structure
Author :
Takeuchi, H. ; Hasumi, Y. ; Kondo, Satoshi ; Noguchi, Y.
Author_Institution :
NTT Optoelectron. Labs., Kanagawa, Japan
fDate :
3/18/1993 12:00:00 AM
Abstract :
A 4*4 directional coupler switch matrix is developed which uses, for the first time, the quantum confined Stark effect of InGaAlAs/InAlAs multiquantum well structures. The rearrangeable nonblocking 4*4 network with six 2*2 switches is shown to be perfectly functional with switching voltages between 5 and 6 V and crosstalk below -17 dB in all the operation states.
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; directional couplers; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical couplers; optical switches; semiconductor quantum wells; 17.5 to 18.5 dB; 4*4 directional coupler switch matrix; 5 to 6 V; InGaAlAs-InAlAs multiquantum well structure; crosstalk; quantum confined Stark effect; rearrangeable nonblocking 4*4 network; switching voltages; transmission loss;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930349
