Title :
Fundamental characteristics of an InGaAsP/InP laser transistor
Author :
Shibata, Jun ; Mori, Yojiro ; Sasai, Y. ; Hase, N. ; Serizawa, H. ; Kajiwara, Toshiya
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Central Research Laboratory, Moriguchi, Japan
Abstract :
We have demonstrated a novel heterostructure device with functions of both a semiconductor laser and a heterojunction bipolar transistor, which is applicable to highly multifunctional optoelectronic integrated circuits. It can control both lasing power and output current. CW operation of the InGaAsP/InP transverse current injection laser at around room temperature has been achieved for the first time.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; semiconductor junction lasers; CW operation; InGaAsP/InP laser transistor; InGaAsP/InP transverse current injection laser; heterojunction bipolar transistor; heterostructure device; lasing power; optoelectronic integrated circuits; output current; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850068
