Title :
Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber
Author :
Semenov, A.T. ; Konyaev, V.P. ; Zverkov, M.V.
Author_Institution :
Superlum Ltd., Moscow, Russia
fDate :
3/18/1993 12:00:00 AM
Abstract :
Visible (670 nm) superluminescent diodes (SLDs) based on AlGaInP/GaInP heterostructures with tapered grounded absorber have been developed. The SLDs have CW output power up to 4 mW at 20 degrees C, spectral bandwidth 12 nm and spectral ripple less than 10%.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; 4 mW; 670 nm; AlGaInP-GaInP heterostructures; CW output power; spectral bandwidth; spectral ripple; superluminescent diodes; tapered grounded absorber; transverse mode stability; visible spectral range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930354
