• DocumentCode
    1005681
  • Title

    Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber

  • Author

    Semenov, A.T. ; Konyaev, V.P. ; Zverkov, M.V.

  • Author_Institution
    Superlum Ltd., Moscow, Russia
  • Volume
    29
  • Issue
    6
  • fYear
    1993
  • fDate
    3/18/1993 12:00:00 AM
  • Firstpage
    530
  • Lastpage
    532
  • Abstract
    Visible (670 nm) superluminescent diodes (SLDs) based on AlGaInP/GaInP heterostructures with tapered grounded absorber have been developed. The SLDs have CW output power up to 4 mW at 20 degrees C, spectral bandwidth 12 nm and spectral ripple less than 10%.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; 4 mW; 670 nm; AlGaInP-GaInP heterostructures; CW output power; spectral bandwidth; spectral ripple; superluminescent diodes; tapered grounded absorber; transverse mode stability; visible spectral range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930354
  • Filename
    256267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005681