DocumentCode
1005756
Title
8 GHz, 10 W solid-state power amplifier for microwave digital radio
Author
Cheng, T.C.
Author_Institution
M.A. Electronics Canada Limited, M/A-COM Company, Mississauga, Canada
Volume
21
Issue
3
fYear
1985
Firstpage
110
Lastpage
111
Abstract
An 8 GHz, 10 W GaAs FET prototype power amplifier has been developed to replace the TWT in the Northern Telecom´s digital microwave radio system. For a single bit stream of 91.04 Mbit/s, the residual bit error rate at 40 dBm output level was 1.0×10¿32 compared with 1.0×10¿23 for TWT; the AM/AM conversion ratio was 0.375 dB/dB and AM/PM was 0.84°/dB. The total mean time between failure of the amplifier was 350 000 h.
Keywords
III-V semiconductors; gallium arsenide; microwave amplifiers; power amplifiers; radio equipment; solid-state microwave circuits; AM/AM conversion ratio; AM/PM conversion ratio; GaAs FET power amplifier; frequency 8 GHz; microwave digital radio; power 10 W; residual bit error rate 1Ã\x9710-32; single bit stream 91.04 Mbit/s; solid-state power amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850076
Filename
4250885
Link To Document