• DocumentCode
    1005864
  • Title

    Low-noise HEMT fabricated by MOCVD

  • Author

    Takakuwa, H. ; Kato, Y. ; Watanabe, S. ; Mori, Y.

  • Author_Institution
    Sony Corporation, Research Department, Semiconductor Group, Atsugi, Japan
  • Volume
    21
  • Issue
    4
  • fYear
    1985
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    Low-noise HEMTs with GaAlAs/GaAs heterostructures have been successfully fabricated using metal organic chemical vapour deposition (MOCVD). Hall mobilities of the two-dimensional electron gas at the interface are 8000 and 148 000 cm2/Vs at 300 and 77 K. These are comparable to the best results yet reported using molecular beam epitaxy (MBE). The HEMTs fabricated by MOCVD with a 0.8 ¿m-long gate have exhibited a noise figure of 1.47 dB with 9 dB associated gain at 12 GHz and transconductance of 190 mS/mm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; solid-state microwave devices; vapour phase epitaxial growth; 12 GHz; GaAlAs/GaAs heterostructures; Hall mobilities; MOCVD; epitaxial layers; metal organic chemical vapour deposition; microwave HEMT; noise figure 1.47 dB; transconductance 190 mS/mm; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850088
  • Filename
    4250899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005864