X-Band Substrate Integrated Waveguide Amplifier

Author

Abdolhamidi, Mostafa ; Shahabadi, Mahmoud

Author_Institution

Center of Excellence for Appl. Electromagn. Syst., Univ. of Tehran, Tehran

Volume

18

Issue

12

fYear

2008

Firstpage

815

Lastpage

817

Abstract

Design and realization of a compact X-band single-transistor amplifier with substrate integrated waveguide (SIW)-based input and output matching networks is presented. The overall size of the proposed SIW amplifier is only 1.5lambda_g at the center frequency. Using a calibration technique, we extract the S-parameters of the fabricated amplifier with reference to its SIW ports. Measurements show that the amplifier features 10 dB of power gain with less than 2 dB of ripple and more than 10 dB of input and output return losses on the SIW ports in the entire frequency band. Due to an appropriate modeling of the constituent blocks of the amplifier, a good agreement between the simulation and measurement results is observed.

Keywords

S-parameters; calibration; integrated circuit design; microwave amplifiers; microwave integrated circuits; substrate integrated waveguides; S-parameters; X-band substrate integrated waveguide amplifier; gain 10 dB; matching networks; microwave amplifier; single-transistor amplifier; Calibration; Circuits; Electromagnetic waveguides; Frequency measurement; Gain measurement; Impedance matching; Microstrip components; Microwave amplifiers; Power measurement; Radiofrequency amplifiers; Calibration; microwave amplifier; substrate integrated waveguide (SIW);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.2007711

Filename

4686759