Title :
Two-dimensional array of GaInAsP/InP surface-emitting lasers
Author :
Uchiyama, S. ; Iga, Kenichi
Author_Institution :
Tokyo Institute of Technology, Research Laboratory of Precision Machinery & Electronics, Yokohama, Japan
Abstract :
We have improved the mirror quality of a GaInAsP/InP surface emitting laser with a ring electrode on a round mesa cap. The minimum threshold current has been reduced to 35 mA at 77 K, and the uniformity of the laser threshold has been improved. The first two-dimensional (2×2) laser array has been demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; semiconductor junction lasers; 35 mA minimum threshold current; 77K; GaInAsP/InP; III-V semiconductors; cavity resonators; integrated optics; mirror quality improvement; ring electrode; round mesa cap; semiconductor lasers; surface-emitting lasers; two-dimensional array;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850115
