Title :
InGaAsP/InP multiquantum-well structure grown by MOCVD
Author :
Morisaki, M. ; Ogura, M. ; Hase, N. ; Kajiwara, Toshiya
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Central Research Laboratory, Moriguchi, Japan
Abstract :
InGaAsP/InP multiquantum-well (MQW) structures have been successfully grown by low-pressure MOCVD. The abruptness of the As atom profile was measured to be 20 Ã… by SIMS analysis. Continuous operation of InGaAsP/InP lasers using MQW structure has been achieved at 80 K.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; secondary ion mass spectra; semiconductor growth; semiconductor junction lasers; semiconductor superlattices; vapour phase epitaxial growth; 80K; As atom profile; III-V semiconductors; InGaAsP/InP; MQW structure; SIMS analysis; VPE; continuous operation; low-pressure MOCVD; multiquantum-well structure; semiconductor lasers; semiconductor superlattices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850116
