Comparative study on the high-bandgap material (GaN and SiC)-based impact avalanche transit time device

The dynamic characteristics of GaN and SiC-based impact avalanche transit times (IMPATTs) are reported at D-band. The device properties are compared at the same operating conditions and frequency of operations. A noise analysis model is employed to assess the performance studies. The noise of SiC-based IMPATTs is found to be higher than that of GaN-based IMPATTs. It is shown that the high-bandgap semiconductor material-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation. The computed power densities are found to be, respectively, 2.48times10⁷, 2.78times10⁷ and 0.07times10⁷ W/cm² for SiC, GaN and GaAs-based IMPATTs at the same operating conditions.