Title :
Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate
Author :
Yang, X.R. ; Xu, B. ; Wang, Z.G. ; Jin, P. ; Liang, P. ; Hu, Y. ; Sun, H. ; Chen, Y.H. ; Liu, F.L.
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China
fDate :
6/22/2006 12:00:00 AM
Abstract :
A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix on InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature up to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 μm at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the range of 220-320 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor quantum wires; substrates; thermal stability; waveguide lasers; 1.713 micron; 220 to 320 K; 47 K; 5 mm; CW mode; InAlGaAs-InAlAs; InP; continuous-wave mode; continuous-wave operation; emission wavelength; heatsink temperature; quantum-wire laser structure; ridge-waveguide lasers; self-assembly process; solid-source molecular beam epitaxy; temperature stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061350
