Title :
High-speed GaInAs Schottky photodetector
Author :
Emeis, N. ; Schumacher, Hermann ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
A Schottky contact photodiode on p-type GaInAs for application at ¿=1.3¿1.6 ¿m has been fabricated and tested. The coaxial type device shows an external quantum efficiency of 19% at ¿=1.27 ¿m, and rise and fall times of less than 15 ps.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; photodiodes; 1.3 microns to 1.6 microns; GaInAs Schottky photodetector; III-V semiconductors; Schottky contact photodiode; coaxial type device; external quantum efficiency; fall times; rise times;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850127
