DocumentCode :
1006361
Title :
Dynamic impact of self-heating on input impedance of bipolar transistors
Author :
de Souza, A.A.L. ; Nallatamby, J.C. ; Prigent, M. ; Quéré, R.
Author_Institution :
XLIM-Dep. Univ. of Limoges, Brive, France
Volume :
42
Issue :
13
fYear :
2006
fDate :
6/22/2006 12:00:00 AM
Firstpage :
777
Lastpage :
778
Abstract :
The influence of self-heating on the input impedance of bipolar transistors is analytically derived and experimental data presented to validate the analysis. The effect is mainly governed by the collector biasing conditions, and may be advantageously explored up to the thermal response cutoff frequency of the device.
Keywords :
bipolar transistors; semiconductor device models; bipolar transistor input impedance; collector biasing conditions; dynamic self-heating impact; forward transconductance; input impedance; output conductance; thermal response cutoff frequency;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20060904
Filename :
1648584
Link To Document :
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