Title :
Photorefractive determination of the sign of photocarriers in InP and GaAs
Author :
Glass, A.M. ; Klein, M.B. ; Valley, George C
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
The sign of the majority photocarriers in semi-insulating iron-doped InP and undoped GaAs containing EL2 centres illuminated at 1.06 ¿m is unambiguously determined from the direction of beam coupling in a two-wave photorefractive mixing experiment previously applied to ferroelectric crystals. Majority photocarriers in these InP:Fe and GaAs:EL2 crystals are found to be electrons.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconducting materials; photorefractive effect; EL2 centres; GaAs; GaAs:EL2; III-V semiconductors; InP; InP:Fe; illumination wavelength 1.06 microns; majority photocarriers; photorefractive measurement; semiinsulating materials; sign of photocarriers; two-wave photorefractive mixing experiment;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850156
